Technology Blog

OTTAWA, Ontario, July 23 /PRNewswire/ -- UBM TechInsights has announced Winbond Electronics as the winner of the Most Innovative DRAM award in TechInsights' 9th Annual Insight Awards. Winbond's 65nm buried wordline 1Gbit DDR2 SDRAM garnered the award. (Photo: http://photos.prnewswire.com/prnh/20100723/SF39588) (Photo: http://www.newscom.com/cgi-bin/prnh/20100723/SF39588) Winbond's DRAM won the award despite being implemented in a conservative 65nm process. Young Choi, Senior Manager in TechInsights' Technical Intelligence group commented, "Our analysts consider the Winbond device a revolutionary step forward in DRAM design. The buried wordline cell structure dramatically improves parasitics in the cell by physically separating the wordline from the rest of the structure. This cell architecture could lead to a scaling factor of 4F2 compared to the current implementation at 6F2." Choi continued, "We expect to see Winbond follow a traditional manufacturing learning curve with this new architecture, releasing pro